Moving Image

X. Oxidation of silicon: Role of Si/SiO2 interface in optical and electrical properties

About this Video

Full Title
X. Oxidation of silicon: Role of Si/SiO2 interface in optical and electrical properties
Member of
10. Oxidation of silicon: Role of Si/SiO2 interface in optical and electrical properties
Contributor(s)
Creator: Tomozawa, M
Date Issued
2005-06-26
Language
English
Type
Moving Image
Genre
lectures
Form
digital moving image formats
Media type
video/mp4
Subject (LCSH)
Materials science
Glass
Date Other
2005
Tomozawa, M. (2005). X. Oxidation of silicon: Role of Si/SiO2 interface in optical and electrical properties (1–). https://preserve.lehigh.edu/lehigh-scholarship/programs-events/international-materials-institute-new-functionality-glass-45-38
Tomozawa, M. 2005. “X. Oxidation of Silicon: Role of Si SiO2 Interface in Optical and Electrical Properties”. https://preserve.lehigh.edu/lehigh-scholarship/programs-events/international-materials-institute-new-functionality-glass-45-38.
Tomozawa, M. X. Oxidation of Silicon: Role of Si SiO2 Interface in Optical and Electrical Properties. 26 June 2005, https://preserve.lehigh.edu/lehigh-scholarship/programs-events/international-materials-institute-new-functionality-glass-45-38.