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Annealing effects on the photoluminescence of gallium phosphide crystals

About this Digital Document

Zince and oxygen doped gallium phosphide crystals were solution grown at 1170 C. Debye-Scherrer film and Laue patterns indicated that GaP single crystals were grown with the face parallel to a plane. Resistivity and Hall effect measurements were made from which carrier concentrations and mobilities were calculated.

Full Title
Annealing effects on the photoluminescence of gallium phosphide crystals
Contributor(s)
Thesis advisor: Notis, Michael R.
Publisher
Lehigh University
Date Issued
1970-05
Language
English
Type
Genre
Form
electronic documents
Department name
Materials Science and Engineering
Digital Format
electronic documents
Media type
Creator role
Graduate Student
Identifier
1048261755
https://asa.lib.lehigh.edu/Record/10947120
Hughes, . D. L. (1970). Annealing effects on the photoluminescence of gallium phosphide crystals (1–). https://preserve.lehigh.edu/lehigh-scholarship/graduate-publications-theses-dissertations/theses-dissertations/annealing
Hughes, Donald Leroy. 1970. “Annealing Effects on the Photoluminescence of Gallium Phosphide Crystals”. https://preserve.lehigh.edu/lehigh-scholarship/graduate-publications-theses-dissertations/theses-dissertations/annealing.
Hughes, Donald Leroy. Annealing Effects on the Photoluminescence of Gallium Phosphide Crystals. May 1970, https://preserve.lehigh.edu/lehigh-scholarship/graduate-publications-theses-dissertations/theses-dissertations/annealing.