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10. Oxidation of silicon: Role of Si/SiO2 interface in optical and electrical properties

About this Digital Document

Full Title
10. Oxidation of silicon: Role of Si/SiO2 interface in optical and electrical properties
Contributor(s)
Creator: Tomozawa, M
Date Issued
2005-06-26
Language
English
Type
Form
electronic documents
Media type
Subject (LCSH)
Date Other
Summer
Tomozawa, M. (2005). 10. Oxidation of silicon: Role of Si/SiO2 interface in optical and electrical properties (1–). https://preserve.lehigh.edu/lehigh-scholarship/programs-events/international-materials-institute-new-functionality-glass-45-44
Tomozawa, M. 2005. “10. Oxidation of Silicon: Role of Si SiO2 Interface in Optical and Electrical Properties”. https://preserve.lehigh.edu/lehigh-scholarship/programs-events/international-materials-institute-new-functionality-glass-45-44.
Tomozawa, M. 10. Oxidation of Silicon: Role of Si SiO2 Interface in Optical and Electrical Properties. 26 June 2005, https://preserve.lehigh.edu/lehigh-scholarship/programs-events/international-materials-institute-new-functionality-glass-45-44.