Document
About this Digital Document
Thin silicon nitride films have been deposited on silicon substrates by audio frequency reactive sputtering in a hollow cathode supported nitrogen plasma. All films were amorphous and had properies comparable to or better than that of films produced by other techniques.
Full Title
Some physical properties of silicon nitride thin films prepared by audio frequency sputtering in a nitrogen plasma
Member of
Contributor(s)
Creator: McKnight, Hugh M.
Thesis advisor: Tauber, Richard N.
Publisher
Lehigh University
Date Issued
1967-05
Language
English
Type
Genre
Form
electronic documents
Department name
Materials Science and Engineering
Digital Format
electronic documents
Media type
Creator role
Graduate Student
Identifier
1048261626
https://asa.lib.lehigh.edu/Record/10946839
Keywords
McKnight, . H. M. (1967). Some physical properties of silicon nitride thin films prepared by audio frequency sputtering in a nitrogen plasma (1–). https://preserve.lehigh.edu/lehigh-scholarship/graduate-publications-theses-dissertations/theses-dissertations/some-physical
McKnight, Hugh M. 1967. “Some Physical Properties of Silicon Nitride Thin Films Prepared by Audio Frequency Sputtering in a Nitrogen Plasma”. https://preserve.lehigh.edu/lehigh-scholarship/graduate-publications-theses-dissertations/theses-dissertations/some-physical.
McKnight, Hugh M. Some Physical Properties of Silicon Nitride Thin Films Prepared by Audio Frequency Sputtering in a Nitrogen Plasma. May 1967, https://preserve.lehigh.edu/lehigh-scholarship/graduate-publications-theses-dissertations/theses-dissertations/some-physical.
