Document
About this Digital Document
Impurity concentration in epixtaxial layers frequently vary with distance from the substrate. It is important to be able to measure these profiles with precision though out the entire epitaxial layer.
Full Title
An improved method for determining impurity concentration profiles of epitaxial silicon slices as a function of distance from the surface by the incremental capacitance-voltage method
Member of
Contributor(s)
Creator: Jones, Thomas D.
Thesis advisor: Karakash, John J.
Publisher
Lehigh University
Date Issued
1968-05
Language
English
Type
Genre
Form
electronic documents
Department name
Electrical Engineering
Digital Format
electronic documents
Media type
Creator role
Graduate Student
Identifier
1048261660
https://asa.lib.lehigh.edu/Record/10946875
Keywords
Jones, . T. D. (1968). An improved method for determining impurity concentration profiles of epitaxial silicon slices as a function of distance from the surface by the incremental capacitance-voltage method (1–). https://preserve.lehigh.edu/lehigh-scholarship/graduate-publications-theses-dissertations/theses-dissertations/improved-method
Jones, Thomas D. 1968. “An Improved Method for Determining Impurity Concentration Profiles of Epitaxial Silicon Slices As a Function of Distance from the Surface by the Incremental Capacitance-Voltage Method”. https://preserve.lehigh.edu/lehigh-scholarship/graduate-publications-theses-dissertations/theses-dissertations/improved-method.
Jones, Thomas D. An Improved Method for Determining Impurity Concentration Profiles of Epitaxial Silicon Slices As a Function of Distance from the Surface by the Incremental Capacitance-Voltage Method. May 1968, https://preserve.lehigh.edu/lehigh-scholarship/graduate-publications-theses-dissertations/theses-dissertations/improved-method.
