Doctor of Philosophy
III-nitride alloys and nanostructures have been proved reliable materials for electronic and photonic applications. In particular, indium-gallium-nitride (InGaN) based quantum wells (QW) have been greatly improved over the years exhibiting very high effic
Fragkos, Ioannis, "Study of GaN:Eu & delta-InN Based Active Regions For High Efficiency Long Wavelength Emitters" (2019). Theses and Dissertations. 5558.