Date

1971

Document Type

Thesis

Degree

Master of Science

Department

Materials Science and Engineering

First Adviser

Butler, S. R.

Other advisers/committee members

Goldstein, J. I.

Abstract

MOS capacitors were fabricated on n- and p- type impurity single crystalline wafers parallel to the (111) plane. These capacitors were irradiated with an electron beam at various dosage and energy levels. The C-V curves of the capacitors were examined to better understand the effects of the irradiations.

Comments

Former department name: Metallurgy and Materials Science

Share

COinS