Master of Science
Materials Science and Engineering
Butler, S. R.
Other advisers/committee members
Goldstein, J. I.
MOS capacitors were fabricated on n- and p- type impurity single crystalline wafers parallel to the (111) plane. These capacitors were irradiated with an electron beam at various dosage and energy levels. The C-V curves of the capacitors were examined to better understand the effects of the irradiations.
Thomas, Alan Gene, "A study of radiation-induced perturbations of the silicon-silicon dioxide structure" (1971). Theses and Dissertations. 3986.