Master of Science
Materials Science and Engineering
Notis, Michael R.
Zince and oxygen doped gallium phosphide crystals were solution grown at 1170 C. Debye-Scherrer film and Laue patterns indicated that GaP single crystals were grown with the face parallel to a plane. Resistivity and Hall effect measurements were made from which carrier concentrations and mobilities were calculated.
Hughes, Donald Leroy, "Annealing effects on the photoluminescence of gallium phosphide crystals" (1970). Theses and Dissertations. 3869.