Date

1970

Document Type

Thesis

Degree

Master of Science

Department

Materials Science and Engineering

First Adviser

Notis, Michael R.

Abstract

Zince and oxygen doped gallium phosphide crystals were solution grown at 1170 C. Debye-Scherrer film and Laue patterns indicated that GaP single crystals were grown with the face parallel to a plane. Resistivity and Hall effect measurements were made from which carrier concentrations and mobilities were calculated.

Comments

Former department name: Metallurgy and Materials Science

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