Master of Science
The method of determining energy distribution of surface states at silicon silicon-dioxide interface by using very low frequency signals following the Kuhn's quasi-static method is described. A general description of the solid-solid interface, the surface space charge region in silicon, and their modifications in the presence of interface states is given.
Das, Nalani R., "Measurement of interface states in metal-oxide-semi conductor structures at very low frequencies using quasi-static technique" (1970). Theses and Dissertations. 3799.