Date

1970

Document Type

Thesis

Degree

Master of Science

Department

Electrical Engineering

First Adviser

Leenov, Daniel

Abstract

The method of determining energy distribution of surface states at silicon silicon-dioxide interface by using very low frequency signals following the Kuhn's quasi-static method is described. A general description of the solid-solid interface, the surface space charge region in silicon, and their modifications in the presence of interface states is given.

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