Master of Science
An investigation has been made to understand the effects of gold diffusion temperatures and different epitaxial resistivity values upon the electrical characteristics of a silicon beam-lead sealed-junction transistor whose design is similar to the transistor components presently being used in the fabrication of silicon integrated circuits.
Napoli, Anthony Thomas, "An investigation of the combined effects of gold diffusion temperatures and n-type epitaxial material resistivities upon the electrical parameters of a silicon beam-lead sealed-junction transistor" (1969). Theses and Dissertations. 3734.