Date

1968

Document Type

Thesis

Degree

Master of Science

Department

Materials Science and Engineering

First Adviser

Tauber, Richard N.

Abstract

The formation of silicon by the electron beam dissociation of absorbed tetramethylsilane has been investigated. The growth rate of the thin films of silicon was studied as a function of the vapor pressure of the reactive gas, the temperature of the substrate onto which the gas was absorbed and the current density of the electron beam.

Comments

Former department name: Metallurgy and Materials Science

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Metallurgy Commons

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