Master of Science
Materials Science and Engineering
Tauber, Richard N.
The formation of silicon by the electron beam dissociation of absorbed tetramethylsilane has been investigated. The growth rate of the thin films of silicon was studied as a function of the vapor pressure of the reactive gas, the temperature of the substrate onto which the gas was absorbed and the current density of the electron beam.
Faber, Edward S., "A study of silicon thin films produced by electron beam induced decomposition" (1968). Theses and Dissertations. 3688.