Date

1968

Document Type

Thesis

Degree

Master of Science

Department

Materials Science and Engineering

First Adviser

Tauber, Richard N.

Abstract

An optical method for obtaining an indication of the crystallographic perfection of single crystal silicon is described, and the effects of various growth parameters on the residual stress and radial dislocation distributions are studied.

Comments

Former department name: Metallurgy and Materials Science

Included in

Metallurgy Commons

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