Master of Science
John J. Karakash
Impurity concentration in epixtaxial layers frequently vary with distance from the substrate. It is important to be able to measure these profiles with precision though out the entire epitaxial layer.
Jones, Thomas D., "An improved method for determining impurity concentration profiles of epitaxial silicon slices as a function of distance from the surface by the incremental capacitance-voltage method" (1968). Theses and Dissertations. 3624.