Date

1968

Document Type

Thesis

Degree

Master of Science

Department

Electrical Engineering

First Adviser

Daniel Leenov

Abstract

A production method for measuring fT of beam lead transistor chips has been developed. The measurement is made on the transistor chips eliminating the need of mounting samples on headers and makingthe measurement in the conventional way. Only measurements at a frequency of 100 megahertz are considered, but the same techniques should apply at frequencies up to 300 megahertz.

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