Date

1967

Document Type

Thesis

Degree

Master of Science

Department

Electrical Engineering

First Adviser

Karakash, John J.

Abstract

A study is made of the noise-producing mechanisms in semiconductor devices. Using the mechanisms known to be intrinsic to a transistor, a mathematical model is then developed to describe noise factor as a function of transistor parameters and operating conditions. Using typical values for alloy junction transistors, theoretical effects of source resistance, frequency, operating current and voltage, temperature, current gain and leakage current are developed. Experimental verification of the theorectical results is made and the two are in good agreement.

Share

COinS