Master of Science
Materials Science and Engineering
Krauss, George E.
Antimony doped, n-type germanium wafers were wetted by 3mg spheres of gallium under a nitrogen atmosphere. The effects of disolation etch pit density and etch pit size on wetting were extensively ovserved at 50 degrees C. A secondary invesitgation relating temperature to wetting was performed up to 340 degrees C.
Mushial, Richard G., "The effects of dislocation etch pits on the wetting of 111 surfaces of antimony doped, N-type germanium by gallium" (1966). Theses and Dissertations. 3477.