Date

1966

Document Type

Thesis

Degree

Master of Science

Department

Materials Science and Engineering

First Adviser

Krauss, George E.

Abstract

Antimony doped, n-type germanium wafers were wetted by 3mg spheres of gallium under a nitrogen atmosphere. The effects of disolation etch pit density and etch pit size on wetting were extensively ovserved at 50 degrees C. A secondary invesitgation relating temperature to wetting was performed up to 340 degrees C.

Comments

Former department name: Metallurgy and Materials Science

Included in

Metallurgy Commons

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