Master of Science
Materials Science and Engineering
Conard, George P.
The investigation indicated that at both lower and higher nitrogen doping levels, the specific resistivity of the deposited thin film was predominantly a function of the nature of the phase, while at the intermediate nitrogen doping levels, residual reactive gas inpurities had a considerable effect on the specific resistivity.
Fletcher, Ivan M., "Study of structure and electrical properties of tantalum nitride thin films" (1966). Theses and Dissertations. 3435.